DMP57D5UFB document number: ds31274 rev. 3 - 2 1 of 4 www.diodes.com march 2008 ? diodes incorporated DMP57D5UFB new product p-channel enhancement mode fi eld effect transistor features ? low on-resistance: r ds(on) 6? @ v gs = -4.0v r ds(on) 8? @ v gs = -2.5v ? very low gate threshold voltage, 1.0v ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected gate, 1kv ? lead free by design/rohs compliant (note 2) ? "green" device (note 4) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn1006-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? terminal connecti ons: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.001 grams (approximate) dfn1006-3 source gate protection diode gate drain body diode d s g esd protected to 1kv bottom view top view internal schematic e q uivalent circuit maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -50 v gate-source voltage v gss 8 v drain current (note 1) steady t a = 25 c i d -200 ma pulsed drain current (note 3) i dm -700 ma thermal characteristics characteristic symbol value units total power dissipation (note 1) p d 425 mw thermal resistance, junction to ambient @t a = 25c (note 1) r ja 294 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss -50 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -10 a v ds = -50v, v gs = 0v gate-source leakage i gss ? ? 500 na v gs = 8v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs(th) -0.7 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? ? 4.6 6 6 8 v gs = -4.0v, i d = -100ma v gs = -2.5v, i d = -80ma forward transfer admittance |y fs | 100 ? ? ms v ds = -5v, i d = -100ma diode forward voltage (note 5) v sd ? ? -1.2 v v gs = 0v, i s = -100ma dynamic characteristics input capacitance c iss ? 29 ? pf output capacitance c oss ? 7.3 ? pf reverse transfer capacitance c rss ? 2.5 ? pf v ds = -4v, v gs = 0v f = 1.0mhz notes: 1. device mounted on fr-4 pcb. t 5 sec. 2. no purposefully added lead. 3. pulse width 10 s, duty cycle 1%. 4. diodes inc.'s "green" policy c an be found on our website at http:// www.di odes.com/products/l ead_free/index.php. 5. short duration pulse test used to minimize self-heating effect.
DMP57D5UFB fig. 1 typical output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v , drain-source voltage (v) ds -i , d r ain c u r r en t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v = -1.5v gs v = -1.8v gs v = -2.5v gs v = -4.5v gs v = -10v gs fig. 2 typical transfer characteristics 0 0.1 0.2 0.3 0.4 -v , gate source voltage (v) gs -i , d r ai n c u r r e n t (a) d 0.5 1 1.5 2 2.5 3 v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a fig. 3 typical on-resistance vs. drain current and gate voltage 0.001 0.01 0.1 1 -i , drain current (a) d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0 1 2 3 4 5 6 7 8 9 10 v = -4.5v gs v = -10v gs v = -2.5v gs -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 1 10 100 0 0.1 0.2 0.3 0.4 0.5 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , drain-to-source resistance (normalized) ds(on) v = -2.5v i = -100ma gs d v = -4v i = -100ma gs d fig. 6 typical capacitance 0 5 10 15 20 25 30 35 40 -v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) 0 5 10 15 20 25 30 35 f = 1mhz v = 0v gs c iss c oss c rss new product DMP57D5UFB document number: ds31274 rev. 3 - 2 2 of 4 www.diodes.com march 2008 ? diodes incorporated
DMP57D5UFB -v , gate threshold voltage (v) gs(th) 0.5 0.6 0.7 0.8 0.9 1 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a i = -250a d -v , source-drain voltage (v) sd -i , s o u r c e c u r r e n t (a) s fig. 8 diode forward voltage vs. current 0 0.1 0.2 0.3 0.4 0.5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 9 transient thermal response 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , pulse duration time (s) 1 r(t), t r ansient the r mal r esistan c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * r r = 294c/w ? ja ja ja d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse p(pk) t 1 t 2 d = 0.9 new product ordering information (note 6) part number case packaging DMP57D5UFB -7 dfn1006-3 3000/tape & reel notes: 6. for packaging deta ils, go to our website at http://www.di odes.com/datasheets/ap02007.pdf . marking information dp dp = product type marking code dot denotes drain side DMP57D5UFB document number: ds31274 rev. 3 - 2 3 of 4 www.diodes.com march 2008 ? diodes incorporated
DMP57D5UFB package outline dimensions d h b c ln a m k g dfn1006-3 dim min max typ a 0.95 1.075 1.00 b 0.55 0.675 0.60 c 0.45 0.55 0.50 d 0.20 0.30 0.25 g 0.47 0.53 0.50 h 0 0.05 0.03 k 0.10 0.20 0.15 l 0.20 0.30 0.25 m ? ? 0.35 n ? ? 0.40 all dimensions in mm new product DMP57D5UFB document number: ds31274 rev. 3 - 2 4 of 4 www.diodes.com march 2008 ? diodes incorporated suggested pad layout y c g1 g2 x x 1 z dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated.
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